STU432S

STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 PRODUCT SUMMARY VDSS 40V FEATURES ( m W ) Max ID 50A RDS(ON) Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. D 9 @ VGS = 10V D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed a Drain-Source Diode Forward Current Avalanche Current Avalanche Energy c a Symbol VDS VGS a Limit 40 20 50 100 20 23 130 50 -55 to 175 Unit V V A A A A mJ W C 25 C ID IDM IS I AS E AS PD TJ, TSTG b c Maximum Power Dissipation Ta= 25 C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 STU/D432S ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS a Condition V GS = 0V, ID = 250uA V DS = 32V, V GS =0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V , ID =10A V GS = 4.5V, ID =5A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ Max Unit 40 1 V uA 100 nA 1.25 1.6 7 9 30 28 1130 240 145 3 9 11 V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS b Drain-So...