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HSMS-2810 Dataheets PDF



Part Number HSMS-2810
Manufacturers HP
Logo HP
Description Surface Mount RF Schottky Barrier Diodes
Datasheet HSMS-2810 DatasheetHSMS-2810 Datasheet (PDF)

Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options Available * For more information see the Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification TOP VIEW SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3 1 #0 2 1 #2 2 1 #3 2 1.

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Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage (As Low as 0.34 V at 1 mA) • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options Available * For more information see the Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification TOP VIEW SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3 1 #0 2 1 #2 2 1 #3 2 1 #4 2 UNCONNECTED PAIR 3 4 RING QUAD 3 4 BRIDGE QUAD 3 4 CROSS-OVER QUAD 3 4 1 #5 2 1 #7 2 1 #8 2 1 #9 2 Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. The HSMS-2800 series of diodes is optimized for high voltage applications. The HSMS-2810 series of diodes features very low flicker (1/f) noise. The HSMS-2820 series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. The HSMS-2860 series is a high performance diode offering superior Vf and ultra-low capacitance. Note that HP’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. 2 Electrical Specifications TA = 25°C, Single Diode[4] Part Package NumMarkber ing Lead HSMS[5] Code[3] Code Configuration 2800 2802 2803 2804 2805 2807 2808 2810 2812 2813 2814 2815 2817 2818 2820 2822 2823 2824 2825 2827 2828 2829 2860 2862 2863 2864 2865 A0 A2 A3 A4 A5 A7 A8 B0 B2 B3 B4 B5 B7 B8 C0 C2 C3 C4 C5 C7 C8 C9 T0 T1 T3 T4 T5 0 2 3 4 5 7 8 0 2 3 4 5 7 8 0 2 3 4 5 7 8 9 0 2 3 4 5 Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[6] Bridge Quad[6] Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[6] Bridge Quad[6] Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[6] Bridge Quad[6] Cross-over Quad Single Series Pair Common Anode Common Cathode Unconnected Pair None 4 350 0.6 30 — 0.35 10 2835 15* 340 0.7 30 100 1 1.0 12 2810 (1N5712) 20 400 1.0 35 200 15 1.2 15 Nearest Equivalent Axial Lead Part No. 50822800 (1N5711) Minimum Breakdown Voltage VBR (V) 70 Maximum Forward Voltage VF (mV) 400 Maximum Forward Voltage VF (V) @ IF (mA) 1.0 15 Maximum Reverse Leakage IR (nA) @ VR (V) 200 50 Maximum Capacitance CT (pF) 2.0 Typical Dynamic Resistance RD (Ω) [6] 35 Test Conditions IR = 10 µA *IR = 100 µA IF = 1 mA[1] VF = 0 V f= 1.0 MHz[2] IF = 5 mA Notes: 1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum. 3. Package marking code is in white. 4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA, except HSMS-282X which is measured at 20 mA. 5. See section titled “Quad Capacitance.” 6. R D = R S + 5.2 Ω at 25°C and I f = 5 mA. 3 Absolute Maximum Ratings[1] TA = 25°C Symbol If Pt PIV Tj Tstg Parameter Forward Current (1 ms Pulse) Total Device Dissipation Peak Inverse Voltage Junction Temperature Storage Temperature Value 1 Amp 250 mW[2] Same as VBR 150°C -65 to 150°C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated temperature. Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. HP defines this measurement as “CM”, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C1 x C2 C3 x C4 CDIAGONAL = _______ + _______ C3 + C4 C1 + C2 A C1 C C2 C4 B C3 The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula 1 CADJACENT = C1 + ____________ 1 1 1 –– + –– + –– C2 C 3 C4 This information does not apply to cross-over quad diodes. SPICE Parameters Parameter BV CJ0 EG IBV IS N RS PB PT M Units V pF eV A A Ω V HSMS-280X 75 1.6 0.69 10E-5 3 x 10E - 8 1.08 30 0.65 2 0.5 HSMS-281X 25 1.1 0.69 10E-5 4.8 x 10E - 9 1.08 10 0.65 2 0.5 HSMS-282X 15 0.7 0.69 10E-4 2.2 x 10E -8 1.08 6.0 0.65 2 0.5 HSMS-286X 7.0 0.18 0.69 10E-5 5.0 x 10E -8 1.08 5.0 0.65 2 .


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