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HSMS-280F Dataheets PDF



Part Number HSMS-280F
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Surface Mount RF Schottky Barrier Diodes
Datasheet HSMS-280F DatasheetHSMS-280F Datasheet (PDF)

www.DataSheet4U.com Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT (Failure in Time) Rate* Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that.

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www.DataSheet4U.com Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT (Failure in Time) Rate* Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that Agilent’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options Available • Lead-free Option Available B COMMON ANODE C COMMON CATHODE * For more information see the Surface Mount Schottky Reliability Data Sheet. E F Package Lead Code Identification, SOT-363 (Top View) HIGH ISOLATION UNCONNECTED PAIR 6 5 4 UNCONNECTED TRIO 6 5 4 Package Lead Code Identification, SOT-23/SOT-143 (Top View) SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3 1 2 3 K COMMON CATHODE QUAD 6 5 4 1 2 3 L COMMON ANODE QUAD 6 5 4 1 #0 2 1 #2 2 1 #3 2 1 #4 2 1 2 M 3 1 2 N 3 UNCONNECTED PAIR 3 4 RING QUAD 3 4 BRIDGE QUAD 3 4 BRIDGE QUAD 6 5 4 6 RING QUAD 5 4 1 2 1 #5 2 1 #7 2 1 #8 2 P 3 1 2 R 3 DataSheet 4 U .com www.DataSheet4U.com 2 Pin Connections and Package Marking, SOT-363 1 2 3 6 5 4 Notes: 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Absolute Maximum Ratings[1] TC = 25°C Symbol If PIV Tj Tstg θjc Parameter Forward Current (1 µs Pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance[2] Unit Amp V °C °C °C/W SOT-23/SOT-143 1 Same as VBR 150 -65 to 150 500 SOT-323/SOT-363 1 Same as VBR 150 -65 to 150 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications TA = 25°C, Single Diode[3] Part Package Number Marking Lead HSMS[4] Code Code 2800 2802 2803 2804 2805 2807 2808 280B 280C 280E 280F 280K 280L 280M 280N 280P 280R A0 A2 A3 A4 A5 A7 A8 A0 A2 A3 A4 AK AL H N AP O 0 2 3 4 5 7 8 B C E F K L M N P R Minimum Maximum Breakdown Forward Voltage Voltage VBR (V) VF (mV) 70 410 Maximum Forward Voltage VF (V) @ IF (mA) 1.0 15 Maximum Reverse Typical Leakage Maximum Dynamic IR (nA) @ Capacitance Resistance VR (V) CT (pF) RD (Ω) [5] 200 50 2.0 35 Test Conditions Notes: 1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum. 3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled “Quad Capacitance.” 5. R D = R S + 5.2 Ω at 25°C and I f = 5 mA. GUx Configuration Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[4] Bridge Quad[4] Single Series Common Anode Common Cathode High Isolation Unconnected Pair Unconnected Trio Common Cathode Quad Common Anode Quad Bridge Quad Ring Quad IR = 10 µA IF = 1 mA VF = 0 V f = 1 MHz IF = 5 mA DataSheet 4 U .com www.DataSheet4U.com 3 Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Agilent defines this measurement as “CM”, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C1 x C2 C3 x C4 CDIAGONAL = _______ + _______ C1 + C2 C3 + C4 A C1 C C2 C4 B C3 The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula 1 CADJACENT = C1 + ____________ 1 1 1 –– + –– + –– C2 C 3 C4 This information does not apply to cross-over quad diodes. Linear Equivalent Circuit, Diode Chip Rj RS SPICE Parameters Parameter Units BV CJ0 EG IBV IS N RS PB PT M V pF eV A A Ω V HSMS-280x 75 1.6 0.69 E-5 3E - 8 1.08 30 0.65 2 0.5 Cj RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of S.


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