DatasheetsPDF.com

J210 Dataheets PDF



Part Number J210
Manufacturers Vishay
Logo Vishay
Description N-Channel JFETs
Datasheet J210 DatasheetJ210 Datasheet (PDF)

J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J212 PRODUCT SUMMARY Part Number J210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 VGS(off) (V) –1 to –3 –2.5 to –4.5 –4 to –6 V(BR)GSS Min (V) –25 –25 –25 gfs Min (mS) 4 6 7 IDSS Min (mA) 2 7 15 FEATURES D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA BENEFITS D D D D D Wideband High Gain Very.

  J210   J210


Document
J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J212 PRODUCT SUMMARY Part Number J210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 VGS(off) (V) –1 to –3 –2.5 to –4.5 –4 to –6 V(BR)GSS Min (V) –25 –25 –25 gfs Min (mS) 4 6 7 IDSS Min (mA) 2 7 15 FEATURES D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information). The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount For similar dual products, see the 2N5911/5912 and U440/441 data sheets. TO-226AA (TO-92) D 1 D S 2 S G 3 J210 J211 J212 2 1 TO-236 (SOT-23) 3 G SSTJ211 (Z1)* SSTJ212 (Z2)* *Marking Code for TO-236 Top View Top View For applications information see AN104. Document Number: 70234 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SSTJ210 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J210 J/SSTJ211 J/SSTJ212 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currenta Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = –8 V IG = 1 mA , VDS = 0 V –35 –25 –1 2 –3 15 –100 –25 –2.5 7 –4.5 20 –100 –25 V –4 15 –6 40 –100 mA pA nA pA V –1 –0.5 –1 1 0.7 Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz 4 12 150 4 pF 1.5 5 nV⁄ √Hz NZF 6 12 200 7 12 200 mS mS Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 7-2 Document Number: 70234 S-04028—Rev. E, 04-Jun-01 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 50 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 20 gfs – Forward Transconductance (mS) 100 nA IG(on) @ ID 16 10 nA TA = 125_C IG – Gate Leakage 1 nA IGSS @ 125_C 100 pA 1 mA 1 mA 10 pA TA = 25_C 1 pA IGSS @ 25_C 10 mA 10 mA Gate Leakage Current IDSS – Saturation Drain Current (mA) 40 30 12 20 gfs 8 10 IDSS 4 0 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) 0 0.1 pA 0 4 8 12 16 20 VDG – Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 200 rDS(on) – Drain-Source On-Resistance ( Ω ) gos gos – Output Conductance (mS) 160 160 200 gfs – Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = –5 V 8 TA = –55_C 6 25_C 4 125_C 2 VDS = 10 V f = 1 kHz 120 120 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 –2 –4 –6 –8 –10 80 40 0 VGS(off) – Gate-Source Cutoff Voltage (V) 0 0 0.1 1 ID – Drain Current (mA) 10 Output Characteristics 5 VGS(off) = –2 V 4 ID – Drain Current (µA) VGS = 0 V –0.2 V –0.4 V 3 –0.6 V 2 –0.8 V 1 –1.0 V –1.2 V 0 0 0.2 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) 0 0 0.2 ID – Drain Current (mA) 12 15 Output Characteristics VGS(off) = –5 V VGS = 0 V –0.5 V 9 –2.0 V 6 –2.5 V –3.0 V 3 –3.5 V –1.0 V –1.5 V 0.4 0.6 0.8 VDS – Drain-Source Voltage (V) 1 Document Number: 70234 S-04028—Rev. E, 04-Jun-01.


23LC1RB-TB J210 J211


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)