PMEG6010ER

PMEG6010ER 1 A low VF MEGA Schottky barrier rectifier Rev. 01 — 9 March 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ „ „ „ „ „ Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications „ „ „ „ „ Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.5; f = 20 kHz Tamb ≤ 110 °C Tsp ≤ 140 °C VR VF IR [1] [1] Min Typ Max Unit - 460 30 1 1 60 530 60 A A V mV μA reverse voltage forward voltage reverse current IF = 1 A VR = 60 V Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. NXP Semiconductors PMEG6010ER 1 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 sym001 1 2 [1] The marking bar indicates the cathode. 3. Ordering informat...