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GT60J322
Silicon N-Channel IGBT
Description
GT60J322 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward...
Toshiba Semiconductor
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