VTD34SMH

SILICON PHOTODIODE VTD34SM H FEATURES High sensitivity Low capacitance Fast response Low noise High shunt impedance Leads configured for surface mount applications PRODUCT DESCRIPTION This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. These devices are designed to provide excellent sensitivity at low levels of irradiance. Linearity is assured by the high shunt impedance and low series resistance. Due to their low junction capacitance, these devices exhibit fast response, even with relatively high load resistances. ELECTRO-OPTICAL CHARACTERISTICS @ 25° C PARAMETER SHORT CIRCUIT CURRENT @ 1000 lux, 2850 K RISE / FALL TIME @ 1 k Ω LOAD, VR = 10 V, 833 nm DARK CURRENT @ VR = 10 V JUNCTION CAPACITANCE @ 1 MHz, VR = 3 V ACCEPTANCE ANGLE (BETWEEN 50% RESPONSE) ACTIVE AREA SYMBOL ISC tR / tF ID CJ MIN. 50 TYP. 70 50 2 25 ±50 7.45 30 40 MAX. UNITS µA nsec nA pF Degrees mm2 θ1/2 A PACKAGE DIMENSIONS inch (mm) RoHS Compliant Spectral Response Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com X GENERAL CHARACTERISTICS PARAMETER OPEN CIRCUIT VOLTAGE @ 1000 lux, 2850 K SOURCE BREAKDOWN VOLTAGE @ 25°C PEAK SPECTRAL RESPONSE @ 25°C RADIOMETRIC SENSITIVITY @ PEAK, 25°C NOISE EQUIVALENT POWER SPECIFIC DETECTIVITY TEMPERATURE COEFFICIENT SHORT CIRCUIT CURRENT @ 2850 K SOURCE OPEN CIRCUIT VOLTAGE @ 2850 K SOURCE DARK CURRENT TEMPERATURE R...