TF9N70

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT9N70L & AOTF9N70L Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 800V@150℃ 9A < 1.2Ω 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D G S G AOTF9N70 S S G AOT9N70 D D C unless otherwise noted Absolute Maximum Ratings TA=25° AOT9N70 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A AOTF9N70 700 ±30 9* 5.8* 33 3.2 77 154 5 50 0.4 -55 to 150 300 AOTF9N70L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT9N70 65 0.5 0.53 236 1.8 9 5.8 9* 5.8* A A mJ mJ V/ns W W/ oC ° C ° C AOTF9N70L 65 -4.5 Units ° C/W ° C/W ° C/W 27.8 0.22 AOTF9N70 65 -2.5 Ma...