20V N-Channel Enhancement Mode MOSFET
SI2306
20V N-Channel Enhancement Mode MOSFET
Features
VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70...
Description
SI2306
20V N-Channel Enhancement Mode MOSFET
Features
VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
SOT-23
S
REF.
Millimeter Millimeter REF. Min. Max. Min. Max . A 2.70 3.10 G 1.90 REF . B 2.40 2.80 H 1.00 1.30 0.20 C 1.40 1.60 K 0.10 D 0.35 0.50 J 0.40 1.15 E 0 0.10 L 0.85 F 0.45 0.55 M 0° 10°
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter S
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Power Dissipation (Note 1) Operating and Storage Temperature Range
ymbol
VDSS VGSS ID 2.8 PD TJ, TSTG
Ratings
20 ±12
Unit
V
A 350 -55 to +150 mW °C
Note: 1. Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, for each single die.
1
JinYu
semiconductor
www.htsemi.com
http://www.Datasheet4U.com
Date:2011/05
SI2306
20V N-Channel Enhancement Mode MOSFET
Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Sy
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
mbol
V(BR)DSS IDSS IGSS
Test Conditions
VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V -VGS = ±12V, VDS = 0V --
Min Typ Max
20 25 ---1 ±100
Unit
V uA nA
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
VGS(TH) RDS (ON) GFS
VDS = VGS, ID = 250uA VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A VDS =...
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