IRF7476PBF

PD - 95279 IRF7476PbF HEXFET® Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l l l VDSS 12V RDS(on) max 8.0mW@VGS = 4.5V ID 15A S S S G 1 8 7 A A D D D D 2 3 6 4 5 Ultra-Low Gate Impedance Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current  Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max. 12 ±12 15 12 120 2.5 1.6 0. 02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 04/05/06 http://www.Datasheet4U.com IRF7476PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 12 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-S...