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F1010N Dataheets PDF



Part Number F1010N
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet F1010N DatasheetF1010N Datasheet (PDF)

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE.

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PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85‡ 60 290 180 1.2 ± 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.85 ––– 62 Units °C/W www.irf.com 1 3/16/01 http://www.Datasheet4U.com IRF1010N Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚ Min. 55 ––– ––– 2.0 32 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 43A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 43A „ VDS = 55V, VGS = 0V 25 µA 250 VDS = 44V, V GS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 43A ns ––– RG = 3.6Ω ––– VGS = 10V, See Fig. 10 „ Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3210 ––– VGS = 0V 690 ––– VDS = 25V 140 ––– pF ƒ = 1.0MHz, See Fig. 5 1030…250† mJ IAS = 4.3A, L = 270µH Typ. ––– 0.058 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 76 39 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 85‡ showing the A G integral reverse ––– ––– 290 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, I S = 43A, V GS = 0V „ ––– 69 100 ns TJ = 25°C, IF = 43A ––– 220 230 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 43A, di/dt ≤ 210A/µs, V DD ≤ V(BR)DSS, T J ≤ 175°C ‚ Starting T J = 25°C, L = 270µH „ Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to T J = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com IRF1010N 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 85A 2.0 1.5 10 1.0 0.5 1 4 6 8 V DS = 25V 20µs PULSE WIDTH.


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