Document
PD - 91278
IRF1010N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max. 85
60 290 180 1.2 ± 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.85 ––– 62
Units
°C/W
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1
3/16/01
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IRF1010N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 55 ––– ––– 2.0 32 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 43A VDS = 55V, VGS = 0V 25 µA 250 VDS = 44V, V GS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10V, See Fig. 6 and 13 ––– VDD = 28V ––– ID = 43A ns ––– RG = 3.6Ω ––– VGS = 10V, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3210 ––– VGS = 0V 690 ––– VDS = 25V 140 ––– pF ƒ = 1.0MHz, See Fig. 5 1030
250 mJ IAS = 4.3A, L = 270µH
Typ. ––– 0.058 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 76 39 48
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 85 showing the A G integral reverse ––– ––– 290 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, I S = 43A, V GS = 0V ––– 69 100 ns TJ = 25°C, IF = 43A ––– 220 230 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 43A, di/dt ≤ 210A/µs, V DD ≤ V(BR)DSS,
T J ≤ 175°C
Starting T J = 25°C, L = 270µH
Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T J = 175°C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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IRF1010N
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
10
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 ° C TJ = 175 ° C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 85A
2.0
1.5
10
1.0
0.5
1 4 6 8
V DS = 25V 20µs PULSE WIDTH.