DatasheetsPDF.com

F1010N

Power MOSFET

Description

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev...

International Rectifier

Download F1010N Datasheet

Similar Datasheet

F1010EL Power MOSFET - Power MOSFET
F1010ES Power MOSFET - Power MOSFET
F1010N Power MOSFET - International Rectifier
F1012 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1014 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1015 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1016 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1018 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1019 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)