SPA15N65C3

SPA15N65C3 CoolMOSTM Power Transistor Features Low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC PG-TO220-3-31 Type SPA15N65C3 Package PG-TO220-3-31 Marking 15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 °C I D=3 A, V DD=50 V I D=5 A, V DD=50 V Value 15 9.4 45 460 0.8 mJ Unit A Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) 5.0 50 ±20 ±30 34 -55 ... 150 M3 and M3.5 screws page 1 50 A V/ns V Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg T C=25 °C W °C Ncm 2008-03-12 http://www.Datasheet4U.com SPA15N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Symbol Conditions IS I S,pulse T C=25 °C Value 15 45 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in....