P-Channel PowerTrench MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ General Description
Thi...
Description
FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
March 2009
tm
Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings -30 ±25 -13 -65 2.5 1.2 1.0 -55 to +150 °C W Units V V A
Thermal Characteristics
RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6679AZ Device FDS6679AZ Reel Size 13’’
1
Tape Width 12mm
Quantity 2500 units
www.fairchildsemi.com
©2009 Fairchild ...
Similar Datasheet