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IPP80N06S2L-05 Dataheets PDF



Part Number IPP80N06S2L-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP80N06S2L-05 DatasheetIPP80N06S2L-05 Datasheet (PDF)

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 4.5 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-05 IPP80N06S2L-05 IPI80N06S2L-05 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 .

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IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 4.5 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-05 IPP80N06S2L-05 IPI80N06S2L-05 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-19004 SP0002-19000 SP0002-19002 Marking 2N06L05 2N06L05 2N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 800 ±20 300 -55 ... +175 mJ V W °C Unit A Rev. 1.0 page 1 2006-03-13 http://www.Datasheet4U.com IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=80 A V GS=4.5 V, I D=80 A, SMD version Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 55 1.2 1.6 2.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 µA - 1 1 4.4 4.1 3.6 3.3 100 100 6 5.7 4.8 4.5 mΩ nA mΩ Rev. 1.0 page 2 2006-03-13 IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=44 V, I D=80 A, V GS=0 to 10 V -6 19 0 170 3.3 25 90 230 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=1.3 Ω V GS=0 V, V DS=25 V, f =1 MHz -1 -9 -6 -9 5700 1330 360 9 3 7 0 ns pF Values typ. max. Unit Reverse recovery time2) t rr -6 5 80 ns Reverse recovery charge2) 1) Q rr - 125 160 nC Current is limited by bondwire; with .


IPI80N06S2L-05 IPP80N06S2L-05 H-03-1


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