HD3A

SILICON PLANAR HIGH SPEED SWITCHING DIODES I HD2A HD3A HD4A 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage Forward Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range VR IF P T O T 75 100 V mA mW o 330 –55 to + 1 5 0 tj:tstg c ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise stated) PARAMETER Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL MIN. MAX. UNIT CONDITIONS V BR 85 0.5 0.715 1.0 1.0 60 4 Typ. V V IR = 100µA lF = 1 m A lF= 1 0 m A V R= 7 5 V o V R =75V, TJ = 1 2 5 C V R=O, f=lMHz VF IR CT t rr v µA µA pF 6 ns I F = l0mA, I R = 10mA I rr = 1 mA ...