FDD4141-F085

FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A „ High performance trench technology for extremely low rDS(on) „ Qualified to AEC Q101 „ RoHS Compliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications „ Inverter „ Power Supplies S D G S G D -P A52 K TO -2 (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings -40 ±20 -50 -58 -10.8 -100 337 69 2.4 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 1a) 1.8 52 °C/W Package Marking and Ordering Information Device Marki...