2SK3140
2SK3140
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-767C (Z) 4th. Edition February 1999 Features
• Low...
Description
2SK3140
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-767C (Z) 4th. Edition February 1999 Features
Low on-resistance R DS(on) = 6 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
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2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR
Note 3 Note 3 Note 1
Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
Pch Note 2 Tch Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3140
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 — — 1.0 — — |yfs| Ciss Coss 45 — — — — — — — — — — — — Typ — — — — 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 30 A, VGS = 10 V Note 1 I D = 30 A, VGS = 4 V Note 1 I D = 30...
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