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92T03GH Dataheets PDF



Part Number 92T03GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description AP92T03GH
Datasheet 92T03GH Datasheet92T03GH Datasheet (PDF)

AP92T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4mΩ 75A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount application.

  92T03GH   92T03GH


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AP92T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4mΩ 75A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 +20 75 50 300 89 0.71 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.4 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200901123 http://www.Datasheet4U.com AP92T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 0.5 - Typ. 0.02 100 45 6 26 12 80 40 7 930 770 Max. Units 4 5.2 2 1 250 +100 72 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=40A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=24V, VGS=0V o Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V VGS= +20V, VDS=0V ID=40A VDS=20V VGS=4.5V VDS=15V ID=40A RG=1Ω,VGS=10V RD=0.375Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 3500 5600 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=40A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. - Typ. 39 42 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP92T03GH/J 280 240 T C =25 C 240 o ID , Drain Current (A) 200 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T C =150 o C 200 160 10V 7.0V 5.0V 4.5V 160 120 120 V G =3.0V 80 V G =3.0V 80 40 40 0 0.0 2.0 4.0 6.0 8.0 0 0.0 2.0 4.0 6.0 8.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2 I D =30A T C =25 ℃ 8 1.6 I D =40A V G =10V RDS(ON) (mΩ) 6 Normalized RDS(ON) 1.2 4 0.8 2 0 02 46 8 10 0.4 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 40 30 5.0 RDS(ON) (mΩ) V GS =4.5V 4.0 IS(A) 20 T j =150 o C 10 T j =25 o C 3.0 V GS =10V 0 0 0.5 1 1.5 2.0 0 204 0 608 0 100 V SD , Source-to-Drain Voltage (V) I D , Drain Current (A) Fig 5. Forward Characteristic of Reverse Diode Fig 6. On-Resistance vs. Drain Current 3 AP92T03GH/J 12 10000 f=1.0MHz VGS , Gate to Source Voltage (V) 9 I D =40A V DS =12V V DS =16V V DS =20V C iss C (pF) 6 1000 C oss C rss 3 0 0 20 40 60 80 100 120 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 100us 0.2 0.1 ID (A) 1ms 10ms 100ms 1s DC 0.1 0.05 PDM 10 t 0.02 T 0.01 T C =25 C Single Pulse 1 0.1 1 10 o Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01.


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