Document
AP92T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristics G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
30V 4mΩ 75A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GJ) are available for low-profile applications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
Rating 30 +20 75 50 300 89 0.71 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.4 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200901123
http://www.Datasheet4U.com
AP92T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 0.5 -
Typ. 0.02 100 45 6 26 12 80 40 7 930 770
Max. Units 4 5.2 2 1 250 +100 72 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=40A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=24V, VGS=0V
o
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
VGS= +20V, VDS=0V ID=40A VDS=20V VGS=4.5V VDS=15V ID=40A RG=1Ω,VGS=10V RD=0.375Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
3500 5600
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=40A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 39 42
Max. Units 1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP92T03GH/J
280 240
T C =25 C
240
o
ID , Drain Current (A)
200
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
T C =150 o C
200
160
10V 7.0V 5.0V 4.5V
160
120
120
V G =3.0V
80
V G =3.0V
80
40 40
0 0.0 2.0 4.0 6.0 8.0
0 0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2
I D =30A T C =25 ℃
8 1.6
I D =40A V G =10V
RDS(ON) (mΩ)
6
Normalized RDS(ON)
1.2
4
0.8
2
0 02 46 8 10
0.4 25 50 75 100 125 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
6.0
40
30
5.0
RDS(ON) (mΩ)
V GS =4.5V
4.0
IS(A)
20
T j =150 o C
10
T j =25 o C
3.0
V GS =10V
0 0 0.5 1 1.5
2.0
0 204 0 608 0 100
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs. Drain Current
3
AP92T03GH/J
12 10000
f=1.0MHz
VGS , Gate to Source Voltage (V)
9
I D =40A V DS =12V V DS =16V V DS =20V
C iss C (pF)
6
1000
C oss C rss
3
0 0 20 40 60 80 100 120
100
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
100us
0.2
0.1
ID (A)
1ms 10ms 100ms 1s DC
0.1
0.05
PDM
10
t
0.02
T
0.01
T C =25 C Single Pulse
1
0.1 1 10
o
Single Pulse
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
0.01.