MBT3906DW1

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low −power surface mount applications where board space is at a premium. Features http://onsemi.com hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−363/SC−88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAM 6 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value −40 −40 −5.0 −200 Unit Vdc Vdc Vdc mAdc A2 M G G 1 A2 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) HBM Class 2 MM Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recom...