Document
FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET
FQP9N90C / FQPF9N90C
N-Channel QFET® MOSFET
900 V, 8.0 A, 1.4 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 8 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQP9N90C FQPF9N90CT
900
8.0
8.0 *
2.8
2.8 *
32
32 *
± 30
900
8.0
20.5
4.0
205
68
1.64
0.54
-55 to +150
300
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink Typ, Max. Thermal Resistance, Junction-to-Ambient, Max.
FQP9N90C 0.61 0.5 62.5
FQPF9N90CT 1.85 -62.5
Unit °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
1
FQP9N90C / FQPF9N90C Rev. C1
www.fairchildsemi.com
FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQP9N90C
FQPF9N90CT
Top Mark FQP9N90C FQPF9N90CT
Package TO-220
TO-220F
Packing Method Tube Tube
Reel Size N/A
N/A
Tape Width N/A
N/A
Quantity 50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250 µA
900 --
ID = 250 µA, Referenced to 25°C -- 0.99
IDSS
IGSSF IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
--
--
10 10 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4 A VDS = 40 V, ID = 4 A
3.0 --
5.0
V
-- 1.12 1.4
Ω
-- 9.2
--
S
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2100 2730 pF
-- 175 230
pF
--
14
18
pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 450 V, ID = 9.0A, RG = 25 Ω
--
50 110
ns
-- 120 250
ns
-- 100 210
ns
(Note 4)
--
75 160
ns
VDS = 720 V, ID = 9.0A,
--
45
58
nC
VGS = 10 V
--
13
--
nC
(Note 4) --
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9 A, dIF / dt = 100 A/µs
Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 21 mH, IAS = 9 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.0 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
8.0
A
--
--
32.0
A
--
--
1.4
V
-- 550
--
ns
-- 6.5
--
µC
©2003 Fairchild Semiconductor Corporation
2
FQP9N90C / FQPF9N90C Rev. C1
www.fairchildsemi.com
FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET
!
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Top : 15.V0GVS
10.0 V
8.0 V
101
7.0 V 6.5 V
6.0 V
Bottom : 5.5 V
100
10-1 10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5 V = 10V
GS
2.0
V = 20V
GS
1.5
※ Note : TJ = 25℃
1.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current an.