ZTX749A

ZTX749A ZTX749A PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 8 c T Value -35 -45 -5 -2 - Continuous om -55 ~ +150 Min. -35 45 5 -100 -10 -100 70 100 75 15 Max. 300 -300 -500 -1.25 -1 100 100 Max. 1 125 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE r e .n a Parameter Electrical Characteristics TA=25°C unless otherwise noted Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC = -10mA ce. Test Condition NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. t e n ua IC = -100µAIE = -100µAVEB = -4V IC = -1A, VCE = -2V Parameter F w C VCB = -30V VCB = -30V, TA = 100°C On Characteristics* ww PD IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA ...