IRFB4310ZPbF

Applications D l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S D DS G TO-220AB IRFB4310ZPbF PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 100V 4.8m: 6.0m: 127A c 120A D D DS G D2Pak IRFS4310ZPbF DS G TO-262 IRFSL4310ZPbF G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR Single Pulse Avalanche Energy e Avalanche Current c EAR Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RJC RCS RJA RJA www.irf.com Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction...