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AON7524 Dataheets PDF



Part Number AON7524
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Datasheet AON7524 DatasheetAON7524 Datasheet (PDF)

AON7524 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.3mΩ < 4mΩ < 5.8mΩ HBM Class 3B RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 .

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AON7524 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.3mΩ < 4mΩ < 5.8mΩ HBM Class 3B RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbo Parameter l Parameter mbol Sy Drain-Source Voltage VDS Maximum Maximum 30 Units V Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C C TC=25° TC=100° C VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG ±12 28 22 112 25 20 28 20 36 32 12.8 3.1 2 -55 to 150 V A A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.1 Max 40 75 3.9 Units ° C/W ° C/W ° C/W Rev.1.0: March 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7524 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS=±10V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=18A VGS=2.5V, ID=16A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 0.4 0.8 2.6 3.6 3 4.4 103 0.62 1 28 2250 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.5 800 65 3.0 37 VGS=10V, VDS=15V, ID=20A 16 3.2 5.2 5 VGS=10V, VDS=15V, R L=0.75Ω, RGEN=3Ω 3 Min 30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage 1 5 ±10 1.2 3.3 4.5 4 5.8 µA µA V mΩ mΩ mΩ S V A pF pF pF Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 4.5 50 22 Ω nC nC nC nC ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 47.5 11.3 16 23 ns ns ns nC IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2013 www.aosmd.com Page 2 of 6 AON7524 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 2.5V 4.5V 2V 80 VDS=5V 80 60 ID (A) ID(A) 60 125°C 25°C 40 40 20 VGS=1.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 VGS=2.5V Normalized On-Resistance 4 RDS(ON) (mΩ ) VGS=4.5V 3 20 0 0 1 2 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 VGS=4.5V ID=18A 1.4 1.2 VGS=2.5V ID=16A VGS=10V ID=20A 2 VGS=10V 1 1 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 0.8 0 25 50 75 100 125 150 175 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperat.


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