AON7516

AON7516 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 30A < 4.5mΩ < 6.8mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View 1 2 3 4 Top View D 8 7 6 5 G S Pin 1 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS C TC=25° Continuous Drain ID TC=100° C CurrentG Maximum 30 ±20 30 23 80 20 16 34 29 36 25 10 3.1 2 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain Current Avalanche Current C C IDM C TA=25° TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C C TC=100° TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 4.2 Max 40 75 5 Units ° C/W ° C/W ° C/W Rev0: Oct 2011 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7516 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ...