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5H11G

ETC

Complementary Power Transistors

4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for...


ETC

5H11G

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Description
4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features Pb−Free Packages are Available Lead Formed for Surface Mount Application in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“−1” Suffix) Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage − VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V (No Suffix) SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS MARKING DIAGRAMS 4 1 2 3 DPAK CASE 369C STYLE 1 YWW J4 xH11 4 DPAK−3 CASE 369D STYLE 1 2 3 Y WW x = Year = Work Week = 4 or 5 YWW J4 xH11 MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation* @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD PD TJ, Tstg Max 80 5 8 16 20 0.16 1.75 0.014 −55 to + 150 Unit Vdc Vdc Adc W W/°C W W/°C °C 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied t...




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