4H11G(NPN) 5H11G(PNP)
Preferred Device
Complementary Power Transistors
DPAK For Surface Mount Applications
Designed for...
4H11G(
NPN) 5H11G(
PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching
regulators, converters, and power amplifiers.
Features
Pb−Free Packages are Available Lead Formed for Surface Mount Application in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“−1” Suffix) Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage − VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V (No Suffix)
SILICON POWER
TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MARKING DIAGRAMS
4 1 2 3 DPAK CASE 369C STYLE 1
YWW J4 xH11
4 DPAK−3 CASE 369D STYLE 1 2 3 Y WW x = Year = Work Week = 4 or 5 YWW J4 xH11
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation* @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD PD TJ, Tstg Max 80 5 8 16 20 0.16 1.75 0.014 −55 to + 150 Unit Vdc Vdc Adc W W/°C W W/°C °C
1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied t...