K3366

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N -Channel M OS Field Effect T ransistor designed for D C/DC converter application of notebook computers. FEATURES Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 730 pF (TYP.) Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±20 ±80 30 1.0 150 –55 to + 150 V V A A W W °C °C Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 4.17 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14256EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan © 1999 http://www.Datasheet4U.com 2SK3366 ELECTRICAL CHARACTERI...