Document
SSF2N60
Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A
TO220
Marking and pin Assignm ent Schematic dia gram
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching dan gene ral pur pose applications Ultra low on-r esistance with low gate charg e Fastswitching and re verse b ody reco very 150 ℃ operati ng temperatur e
Description:
These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode. T hese devices are well suited for high ef ficiency switch mode power supplies
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS Drain-S VGS EAS IAS TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ 54 Linear Derating Factor ource Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range 0.43 600 ± 30 110 2 -55 to + 150 2 1.3 8 W W/°C V V mJ A °C A Units
©Silikron Semiconductor CO.,LTD.
2011.08.18 www.silikron.com
Version : 1.0
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SSF2N60
Typ. — — — Max. 2.32 62 40 Units ℃/W ℃/W ℃/W
Thermal Resistance
Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol Pa rameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr Rise td(off) tf Ciss Crss Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time time Turn-Off delay time Fall time Input capacitance capacitance Reverse transfer capacitance Min. 600 — 3.6 — 8.01 2— — 2.17 —— —— — -100 — — — — — — — — — — — — 11.5 — 2.7 — 4.5 — 9.4 — 7.4 — 25.4 — 20.8 — 323 — 40 — 5— pF ns nC Typ. — Max. — 4 — 4 — 1 50 100 —V Units V Ω V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V
GS
= -30V
ID = 2A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, RL=150Ω, RGEN=25Ω ID=2A VGS = 0V VDS = 25V ƒ = 1MHz
Coss Output
Source-Drain Ratings and Characteristics
Symbol Pa IS ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge rameter Continuous Source Current Min. —— —— — — — 0.86 259.3 1419 Typ. Max. 2 8 1.3 — — Units A A V ns nC Conditions MOSFET symbol showing th e in.