F1S30P05SM

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 File Number 2436.4 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manuf actured using the MegaFET process . This process , which uses feature sizes approaching those of LSI circuits , gives optimum utilization of silicon, resulting in outstanding performance. They were designed f or use in applications such as switching regulators , switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integ rated circuits . Formerly developmental type TA09834. Features 30A, 50V r DS(ON) = 0.065Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG30P05 RFP30P05 RF1S30P05SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P05 RFP30P05 F1S30P05 Symbol D G NOTE: When ordering, use the entirepart number. Add the suffix9A to obtain the T O-263AB v ariant in tape and reel, i.e ., RF1S30P05SM9A. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-126 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-...