GP07N120

SGP07 Fast IGBT in NPT-technology lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 N120 C G E PG-TO-220-3-1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP07N120 1200 Maximum Ratings Parameter S Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s T j , T stg -55...+150 260 °C 2 VCE V IC 8A Eoff 0.7mJ Tj M 150°C arking Package GP07N120 PG-TO-220-3-1 ymbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s V GE EAS tSC Ptot 27 27 ±20 40 10 125 W V mJ µs VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep 07 http://www.Datasheet4U.com Power Semiconductors SGP07 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junct...