MT4HTF1664HY

128MB, 256MB, 512MB (x64, SR) 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT4HTF1664HY – 128MB MT4HTF3264HY – 256MB MT4HTF6464HY – 512MB Features 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64) VDD = VDDQ = 1.8V VDDSPD = 1.7–3.6V JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Multiple internal device banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Programmable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Serial presence detect (SPD) with EEPROM Gold edge contacts Single rank Figure 1: 200-Pin SODIMM (MO-224 R/C C) Module height: 30mm (1.18in) Options Operating temperature – Commercial (0°C ≤ TA ≤ +70°C) – Industrial (–40°C ≤ TA ≤ +85°C)1 Package – 200-pin DIMM (lead-free) Frequency/CL2 – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3.0ns @ CL = 5 (DDR2-667) – 3.75ns @ CL = 4 (DDR2-533)3 – 5.0ns @ CL = 3 (DDR2-400)3 Notes: Marking None I Y -80E -800 -667 -53E -40E 1. Contact Micron for industrial temperature module offerings. 2. CL = CAS (READ) latency. 3. Not recommended for new designs. Table 1: Key Timing Parameters Speed Grade -80E -800 -667 -53E -4...