2SK1095
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2SK1095
Silicon N-Channel MOS FET
Application
TO–220FM
High speed power switching
Features
• • •...
Description
www.DataSheet4U.com
2SK1095
Silicon N-Channel MOS FET
Application
TO–220FM
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
2
12 3
1 1. Gate 2. Drain 3. Source 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 ±20 25 100 25 30 150 –55 to +150 Unit V V A A A W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C
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2SK1095
Table 2 Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(...
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