SSM3K36MFV

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Absolute Maximum Ratings (Ta = 25˚C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 1 2 3 0.13±0.05 0.5±0.05 Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 500 mA 1000 Drain power dissipation PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C VESM JEDEC JEITA 1:Gate 2:Source 3:Drain ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1L1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1:Mounted on an FR4 board (25.4 mm × 25.4 mm...