DatasheetsPDF.com

SVD4N60FG Dataheets PDF



Part Number SVD4N60FG
Manufacturers Silan
Logo Silan
Description 600V N-Channel MOSFET
Datasheet SVD4N60FG DatasheetSVD4N60FG Datasheet (PDF)

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely.

  SVD4N60FG   SVD4N60FG


Document
SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60DTR Package TO-220-3L TO-220F-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60D Material Pb free Pb free Halogen free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 1 of 9 http://www.Datasheet4U.com SVD4N60D/F(G)/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 100 0.8 Ratings SVD4N60T SVD4N60F(G) 600 ±30 4.0 16 33 0.26 276 -55~+150 -55~+150 77 0.62 SVD4N60D Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings SVD4N60T 1.25 62.5 SVD4N60F(G) 3.85 120 SVD4N60D 1.61 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note2,3) VDS=480V,ID=4A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=2A VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=4A, RG=25Ω Min. 600 --2.0 -----------Typ. ----2.0 672 66 4.7 27 19 160 22 19.8 4 7.2 Max. -10 ±100 4.0 2.4 ----------nC ns pF Unit V µA nA V Ω HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 2 of 9 SVD4N60D/F(G)/T_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. 2. 3. L=30mH, IAS=3.81A, VDD=175V, RG=25Ω, starting TJ=25°C; Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operating temperature. Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=4.0A,VGS=0V IS=4.0A,VGS=0V, dIF/dt=100A/µs (Note 2) Min. -----Typ. ---300 2.2 Max. 4.0 16 1.4 --A V ns µC Unit HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 3 of 9 Http://www.silan.com.cn TYPICAL CHARACTERISTICS HANGZHOU SILAN MI CROELECTRONICS CO.,LTD RDS(on)[ ] Drain-Source On-Resistance ID Drain current[A] IDR Reverse Drain Current [A] ID Drain Current [A] Capasistance [pF] VGS Gate-Source Voltage [V] SVD4N60D/F(G)/T_Datasheet REV:1.3 2010.12.13 Page 4 of 9 SVD4N60D/F(G)/T_Datasheet TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 5 of 9 SVD4N60D/F(G)/T_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VGS VDS 10V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD DUT VDS 90% 10V VGS 10% td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform L EAS = VDS ID RG DUT 10V tp BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS IAS VDD VDD ID(t) VDS(t) tp Time HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 6 of 9 SVD4N60D/F(G)/T_Datasheet PACKAGE OUTLINE TO-220F-3L(One) UNIT: mm TO-220F-3L(Two) 3.0±0.3 4.5±0.3 Φ3.2±0.3 2.7±0.3 UNIT: mm 10.0±0.5 15.0±0.5 2.8~4.0 3.9±0.3 2.60±0.30 13.0±0.5 0.65±0.15 0.6±0.15 2.54 ±0.30 HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 7 of 9 SVD4N60D/F(G)/T_Datasheet PACKAGE OUTLINE (continued) TO-252-2L UNIT: mm TO-220-3L UNIT: mm HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 8 of 9 SVD4N.


SVD4N60F SVD4N60FG SVD4N60DTR


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)