200V High Side / Low Side eGaN Gate Driver
ADVANCE INFO
TFG1200
200V High-Side / Low-Side eGaN Gate Driver
Features
Description
Floating high-side ...
Description
ADVANCE INFO
TFG1200
200V High-Side / Low-Side eGaN Gate Driver
Features
Description
Floating high-side driver in bootstrap operation to 200V 1.2A/5A peak source/sink current 0.4Ω/2Ω pull down/pull up impedance Internal bootstrap supply voltage clamped to 5.2V Independent high-side and low-side logic inputs Proprietary bootstrap capacitor auto-recharge
technology Fast propagation delays (25ns typical) Separate source and sink outputs
Applications
The TFG1200 is a high-side/low-side gate driver uniquely designed to drive enhancement mode Gallium Nitride (eGaN) FETs. The TFG1200 provides the special requirements of an eGaN FET driver: supply clamping, low pull-up and pull-down impedance, and high peak currents all within a single IC. A higher sink capability maintains the gate drive line at a low level during the fast dv/dt of the eGaN FET without unintended turn on of the FET. Fast propagation delays, fast rise times, and a proprietary bootstrap capacitor auto-recharge allow higher switching frequencies allowing smaller component footprints; and with the integrated bootstrap diode the required area compared to a discrete solution is greatly reduced.
High Speed DC-DC Conversion Hard Switched and High Frequency Power Supplies Class D Audio
TDFN-10
Typical Application
Ordering Information
Year Week Lot Lot
PART NUMBER (NOTE1) PACKAGE
MARK top botm
TFG1200-NBX
TDFN-10
YWLL TBD
NOTE1 REPLACE X with P for 180 mm Tape & Reel Packing (Qty ...
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