IRFH5255PbF

IRFH5255PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 25 6.0 7.0 0.6 51 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Control MOSFET for high Frequency Buck Converters Features and Benefits Features Benefits Low Charge (typical 7nC) Low Rg (typical 0.6Ω) Low Thermal Resistance to PCB (<4.9°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Switching Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5255TRPbF IRFH5255TR2PbF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 25 ± 20 15 12 51 33 60 3.6 26 0.029 -55 to + 150 Units V A g Power Dissipation g Power Dissipation c W W/°C °C Linear Derating Factor O...