Power MOSFET
PD - 95489D
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Techno...
Description
PD - 95489D
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB applications.
ID = 160A∗
D2 Pak IRF2907ZPbF IRF2907ZSPbF
TO-262 IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current
Max.
170 120 160 * 680 300 2.0 ± 20 270 690 See Fig.12a,12b,15,16 -55 to + 175
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/°C V mJ A mJ °C
c
i
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
h
Soldering Temperature, for 10 secon...
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