G30N60B3

HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features 30 A, 600 V, TC = 110°C Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A Typical Fall Time. . . . . . . . 90ns at TJ = 150°C Short Circuit Rating Low Conduction Loss Formerly Developmental Type TA49170. Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3 Packaging JEDEC STYLE TO-247 NOTE: When ordering, use the entire part number. Symbol C G C E TO-247 G E ©2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HGTG30N60B3 Rev. C1 http://www.Datasheet4U.com HGTG30N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Ratings Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . ....