Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH152N085T IXTQ152N085T
VDSS ID25
RDS(on)
=8 5 V = 152 A ≤ 7.0 m Ω
Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead ...
