HBNPZ1NS6R

CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2009.06.05 Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNPZ1NS6R Features Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Pb-free package. Equivalent Circuit HBNPZ1NS6R Outline SOT-363R EIAJ:SC-88/SC-70-6 JEDEC: SOT-363 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) 50 45 6 150 TR2 (PNP) -50 -45 -5 -150 200(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 150mW per element must not be exceeded. HBNPZ1NS6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 50 45 6 200 80 Typ. 0.2 180 2 Max. 15 100 0.4 600 3.5 Unit V V V nA nA V MHz pF Spec. No. : C901S6R Issued Date : 2009.06.05 Revised Date : 2011.02.22 Page No. : 2/6 Test Conditions IC=100μA IC=1mA IE=50μA VCB=30V VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Min. -50 -45 -5 200 60 ...