HBNP45C6

CYStech Electronics Corp. Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Pb-free lead plating and halogen-free package. Equivalent Circuit HBNP45C6 Outline SOT-563 C1 B2 E2 E1 B1 C2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 60 -60 50 -50 7 -6 150 -150 150(total) *1 150 -55~+150 Unit V V V mA mW °C °C Note: *1 120mW per element must not be exceeded. HBNP45C6 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) TR1 (NPN) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob TR2 (PNP) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 200 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 600 3.5 Unit V V V μA μA V MHz pF Spec. No. : C901C6 Issued Date : 2012.09.28 Revised Date : Page No. : 2/7 Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse W...