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HBN3101S6R

CYStech Electronics

NPN Epitaxial Planar Transistor

CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : P...


CYStech Electronics

HBN3101S6R

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/6 HBN3101S6R (Dual Transistors) Features Two BF422 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High BVCEO, BVCEO≧300V Pb-free lead plating and halogen-free package. Equivalent Circuit HBN3101S6R Outline SOT-363 Tr1 Tr2 Ordering Information Device HBN3101S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBN3101S6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1.Single pulse, Pw=10ms 2.150mW per element must not be exceeded. Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/6 Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 300 300 5 100 300 (Note 1) 200 (total) (Note 2) 150 ...




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