CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : P...
CYStech Electronics Corp.
NPN Epitaxial Planar
Transistor
Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/6
HBN3101S6R
(Dual
Transistors) Features
Two BF422 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High BVCEO, BVCEO≧300V Pb-free lead plating and halogen-free package.
Equivalent Circuit
HBN3101S6R
Outline
SOT-363
Tr1
Tr2
Ordering Information
Device HBN3101S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name
HBN3101S6R
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : 1.Single pulse, Pw=10ms 2.150mW per element must not be exceeded.
Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/6
Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg
Limits 300 300 5 100 300 (Note 1) 200 (total) (Note 2) 150 ...