K2993

2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2993 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 82 mΩ (typ.) : |Yfs| = 20 S (typ.) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Not e 1) ymbol VDSS VDGR VGSS ± ID IDP PD 100 EAS 423 IAR EAR 10 Tch 150 Tstg −55~150 ° 20 Rating 250 250 20 20 60 Unit V V V A W mJ A mJ °C C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Not Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range e 2) JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) ― ― Thermal Characteristics Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 83. Max 25 3 Unit °C / W °C / W Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.5 g (typ.) 1 2002...