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MFIRF13N50

Global Semiconductor
Part Number MFIRF13N50
Manufacturer Global Semiconductor
Description POWER MOSFET
Published May 30, 2014
Detailed Description MFIRF13N50 MCIRF13N50 POWER MOSFET ID = 13A VDS = 500V RDS(on)MAX = 0.48Ω Description/ Features The MFIRF13N50 is used ...
Datasheet PDF File MFIRF13N50 PDF File

MFIRF13N50
MFIRF13N50

Overview
MFIRF13N50 MCIRF13N50 POWER MOSFET ID = 13A VDS = 500V RDS(on)MAX = 0.
48Ω Description/ Features The MFIRF13N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 13 50 500 ±30 150 -55 ~150 Units A A V V ℃ ℃ Case Styles 1、 GATE 2、 DRAIN 3、 S...


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