4V Drive Nch+Nch MOSFET
4V Drive Nch+Nch MOSFET
SH8K5
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protec...
Description
4V Drive Nch+Nch MOSFET
SH8K5
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions (Unit : mm)
SOP8
Packaging specifications
Package Type SH8K5 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
∗1 Pw 10μs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD.
∗1
∗1
(1)
(2)
(3)
(4)
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 30 ±20 ±3.5 ±14 1.6 6.4 2 150 −55 to +150
Unit V V A A A A W °C °C
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Thermal resistance
Parameter Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a) ∗
Limits 62.5
Unit °C / W
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