FDMC7208S

FDMC7208S Dual N-Channel PowerTrench® MOSFET July 2013 FDMC7208S Q1: 30 V, 12 A, 9.0 mΩ Q2: 30 V, 16 A, 6.4 mΩ Features Q1: N-Channel „ Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 6.4 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.5 A „ Termination is Lead-free and RoHS Compliant Dual N-Channel PowerTrench® MOSFET General Description This device inclu des two 30V N-Ch annel MOSFETs in a dual Power 33 ( 3 mm X 3 mm MLP) package. Th e package is enhanced for exceptional thermal performance. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook System Pin 1 G1 S1 S1 S1 D1 D2 G2 S2 S2 S2 Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 3) TA = 25 °C TA = 25 °C (Note 4) TC = 25 °C TA = 25 °C Q1 30 ±20 22 121a 60 21 1.91a 0.81c Q2 30 ±12 26 161b 80 21 1.91b 0.81d mJ W °C A Units V V -55 to +150 Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient 651a 1551c 651b 1551d °C/W Package Marking and Ordering Information Device Marking FDMC7208S Device...