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DTC115TS3 Dataheets PDF



Part Number DTC115TS3
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description NPN Digital Transistors
Datasheet DTC115TS3 DatasheetDTC115TS3 Datasheet (PDF)

CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC115TS3 Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 1/6 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating pa.

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CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC115TS3 Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 1/6 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA115TS3. • Pb-free & Halogen-free package. Equivalent Circuit DTC115TS3 B R1 R1=100 kΩ B:Base C:Collector E:Emitter C E Outline SOT-323 C BE Ordering Information Device Package Shipping DTC115TS3-0-T1-G SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC115TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 50 50 5 100 200 150 -55~+150 Unit V V V mA mW °C °C Electrical Characteristics (Ta=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol Min. Typ. Max. Unit Test Conditions VCBO 50 - - V IC=50μA VCEO 50 - - V IC=1mA VEBO 5 - - V IE=50μA ICBO - - 0.5 μA VCB=50V IEBO - - 0.5 μA VEB=4V VCE(sat) - - 0.3 V IC=1mA, IB=0.1mA hFE 100 - 600 - VCE=5V, IC=1mA R 70 100 130 kΩ - fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Recommended Soldering Footprint DTC115TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current 1000 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 100 HFE@VCE=5V 10 0.1 250 200 150 100 50 0 0 1 10 Collector Current---IC(mA) Power Derating Curve 100 50 100 150 Ambient Temperature --- Ta(℃ ) 200 100 VCESAT@IC=20IB 10 0.1 VCESAT@IC=10IB 1 10 Collector Current --- IC(mA) 100 Power Dissipation---PD(mW) DTC115TS3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 4/6 Carrier Tape Dimension DTC115TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 5/6 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC115TS3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 6/6 □□ 3 1 e1 bp e D A A1 Q C 2 WB Lp detail Z EA Z Marking: Device Code 8TUE Date Code θ He 01 2 mm scale vA 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Base 2.Emitter 3.Collector DIM Inches Min. Max. Millimeters Min. Max. DIM Inches Min. Max. *: Typical Millimeters Min. Max. A 0.0315 0.0433 0.80 1.10 e1 0.0256* 0.65* A1 0.0000 0.0039 0.00 0.10 He 0.0846 0.0965 2.15 2.45 bp 0.0078 0.0157 0.20 0.40 Lp 0.0105 0.0181 0.26 0.46 C 0.0031 0.0059 0.08 0.15 Q 0.0051 0.0091 0.13 0.23 D 0.0709 0.0866 1.80 2.20 v 0.0079 - 0.2 - E 0.0453 0.0531 1.15 1.35 w 0.0079 - 0.2 - e 0.0472 0.0551 1.20 1.40 θ 0° 8° 0° 8° Notes: 1.Controlling dimen.


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