Document
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC115TS3
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 1/6
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA115TS3. • Pb-free & Halogen-free package.
Equivalent Circuit
DTC115TS3
B R1
R1=100 kΩ
B:Base C:Collector E:Emitter
C E
Outline
SOT-323 C
BE
Ordering Information
Device
Package
Shipping
DTC115TS3-0-T1-G
SOT-323 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC115TS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd Tj Tstg
Limits
50 50 5 100 200 150 -55~+150
Unit
V V V mA mW °C °C
Electrical Characteristics (Ta=25°C)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VCBO 50 - - V IC=50μA
VCEO 50 - - V IC=1mA
VEBO
5
-
-
V IE=50μA
ICBO - - 0.5 μA VCB=50V
IEBO - - 0.5 μA VEB=4V
VCE(sat)
-
- 0.3 V IC=1mA, IB=0.1mA
hFE 100 - 600 - VCE=5V, IC=1mA
R 70 100 130 kΩ -
fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
DTC115TS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current 1000
Saturation Voltage vs Collector Current 1000
Saturation Voltage---(mV)
Current Gain---HFE
100 HFE@VCE=5V
10 0.1
250 200 150 100 50
0 0
1 10 Collector Current---IC(mA)
Power Derating Curve
100
50 100 150 Ambient Temperature --- Ta(℃ )
200
100 VCESAT@IC=20IB
10 0.1
VCESAT@IC=10IB
1 10 Collector Current --- IC(mA)
100
Power Dissipation---PD(mW)
DTC115TS3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 4/6
Carrier Tape Dimension
DTC115TS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100°C 150°C 60-120 seconds
150°C 200°C 60-180 seconds
Time maintained above:
−Temperature (TL) − Time (tL)
183°C 60-150 seconds
217°C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC115TS3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 6/6
□□
3
1 e1 bp
e D
A
A1
Q C
2
WB
Lp
detail Z
EA Z
Marking:
Device Code
8TUE
Date Code
θ
He
01
2 mm
scale
vA
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
Style: Pin 1.Base 2.Emitter 3.Collector
DIM
Inches Min. Max.
Millimeters Min. Max.
DIM
Inches Min. Max.
*: Typical
Millimeters Min. Max.
A 0.0315 0.0433 0.80 1.10 e1
0.0256*
0.65*
A1 0.0000 0.0039 0.00 0.10 He 0.0846 0.0965 2.15 2.45
bp 0.0078 0.0157 0.20 0.40 Lp 0.0105 0.0181 0.26 0.46
C 0.0031 0.0059 0.08 0.15
Q 0.0051 0.0091 0.13 0.23
D 0.0709 0.0866 1.80 2.20
v 0.0079
-
0.2
-
E 0.0453 0.0531 1.15 1.35
w 0.0079
-
0.2
-
e 0.0472 0.0551 1.20 1.40
θ
0°
8°
0°
8°
Notes: 1.Controlling dimen.