UTD410

UNISONIC TECHNOLOGIES CO., LTD UTD410 N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 SOT-223 Power MOSFET The UTD410 can prov ide excellent R DS(ON) and low g ate charge b y us ing adva nced tr ench tech nology. T his UTD410 is suitable for using as a load switch or in PWM applications. „ FEATURES 1 TO-252 * VDS=30V, ID=8A * RDS(ON) =48mΩ @VGS =10V „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD410L-TN3-R UT D410G-TN3-R UTD410L-TN3-T UT D410G-TN3-T UTD410L-AA3-R UT D410G-AA3-R Package TO-252 TO-252 SOT-223 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-142.B http://www.Datasheet4U.com UTD410 „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 8 A Pulsed Drain Current (Note1) IDM 20 Repetitive Avalanche Energy (L=0.1mH Note1) EAR 10 mJ TO-252 2 Power Dissipation (TC=25°C) PD W SOT-223 2.3 Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL TO-252 SOT-223 θJA MIN 46 TYP MAX 60 55 UNIT °C/W °C/W Junction-to-Ambient (TC=25°C) „ ELECTRICAL CHARAC...