UNISONIC TECHNOLOGIES CO., LTD UDT1605
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
120V NPN SILICON HIGH VOLTAGE DARLI...
UNISONIC TECHNOLOGIES CO., LTD UDT1605
Preliminary
NPN EPITAXIAL SILICON
TRANSISTOR
120V
NPN SILICON HIGH VOLTAGE DARLINGTON
TRANSISTOR
DESCRIPTION
The UT C UDT1605 is a n
NPN Dar lington
transistor. Utilizing UTC’s advanced techon ology, UDT1605 features ultra- high D C current gai n and lo w c ollector-emitter saturation volta ge, making it suitable for efficient driving functions. The U TC UDT1605 is suita ble for a vari ety of efficient drivin g functions, etc.
FEATURES
* High breakdown voltage * Low saturation voltage * Ultra-high DC current gain
SYMBOL
RDERING INFORMATION
Ordering Number Lead Free Halogen Free UDT1605L-AB3-R UDT1605G-AB3-R
UDT1605L-AB3-R (1)Packing Type (2)Package Type (3)Halogen Free (1) R: Tape Reel (2) AB3: SOT-89 (3) G: Halogen Free, L: Lead Free
Package SOT-89
Pin Assignment 1 2 3 B C E
Packing Tape Reel
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QW-R208-048.A
http://www.Datasheet4U.com
UDT1605
Preliminary
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A 1W Power Dissipation at TA=25°C (Note 1) PD Linear Derating Factor 8 mW/°C 2.8 W Power Dissipation at TA=25°C (Note 2) PD Linear Derating Factor 22 mW/°C Junction Temperature TJ: -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note...