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UFZ34

UNISONIC TECHNOLOGIES

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UFZ34 Preliminary Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF...


UNISONIC TECHNOLOGIES

UFZ34

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Description
UNISONIC TECHNOLOGIES CO., LTD UFZ34 Preliminary Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFZ34 is an N-channel Power MOSFET, it uses UT C’s advanced t echnology to pr ovide the c ustomers with a min imum on state resistance, high switching speed and low gate charge. The U TC UFZ34 is suit able for al l commercial-industrial applications, etc. „ FEATURES * RDS(ON)<0.042Ω @VGS=10V, ID=17A * High switching speed * Low gate charge „ SYMBOL D (2) G (1) S (3) „ ORDERING INFORMATION Package TO-220 TO-251 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tube Tape Reel Ordering Number Lead Free Halogen Free UFZ34L-TA3-T UF Z34G-TA3-T UFZ34L-TM3-T UF Z34G-TM3-T UFZ34L-TN3-R UF Z34G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-900.a http://www.Datasheet4U.com UFZ34 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC=25°C 28 A ID Continuous Drain Current TC=100°C 20 A Pulsed (Note 1) IDM 112 A Avalanche Current (Note 1) IAR 17 A mJ Single Pulsed (Note 2) EAS 97 Avalanche Energy Repetitive (Note 1) EAR 6.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns Power Dissipation TC=25°C P W D 68 Linear Derating Factor 0.46 W/°C Junction Temperature TJ -55~ +175 °C Storage Temperature Range TSTG -55~ +175 °C Note: Absolute maximum ratings are those valu...




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